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Atomic Layer Deposition of Transition Metal Thin Films
Wayne State University researchers have circumvented precursor reactivity problems by developing a three-step deposition scheme that entails a transition metal precursor, an organic acid, and a reducing agent. This novel process can produce high purity, low resistivity copper films at 100 °C, which is a significant breakthrough in transition metal ALD...
Published: 12/2/2021
|
Inventor(s):
Charles Winter
,
Thomas Knisley
,
Thiloka Ariyasena
Keywords(s):
Category(s):
Materials
,
Nanomaterials
,
Physical Sciences
,
Thin films
,
Chemical Processing/Synthesis
,
Industrial & Manufacturing