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Atomic Layer Deposition of Transition Metal Thin Films

Wayne State University researchers have circumvented precursor reactivity problems by developing a three-step deposition scheme that entails a transition metal precursor, an organic acid, and a reducing agent. This novel process can produce high purity, low resistivity copper films at 100 °C, which is a significant breakthrough in transition metal ALD...

Published: 11/23/2011 | Inventor(s): Charles Winter, Thomas Knisley, Thiloka Ariyasena

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Category(s): Materials, Nanomaterials, Physical Sciences, Thin films, Chemical Processing/Synthesis, Industrial & Manufacturing